transistor (npn) ?????? marking: 1p maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 60 v v ceo collector-emitter voltage 40 v v ebo emitter-base voltage 6 v i c collector current 200 ma p c total device dissipation 200 mw r ja thermalresistancefromjunction toambient 625 /w t j junction temperature 150 t stg storage temperature -55 ~ +150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min max unit collector-base breakdown voltage v (br) cbo i c = 10 a, i e =0 60 v collector-emitter breakdown voltage v (br) ceo i c = 1ma, i b =0 40 v emitter-base breakdown voltage v (br) ebo i e =10 a, i c =0 6 v collector cut-off current i cbo v cb =60v, i e =0 0.1 a collector cut-off current i cex v ce =30v, v be(off) =3v 50 na emitter cut-off current i ebo v eb =5v, i c =0 0.1 a h fe(1) v ce =1v, i c =10ma 100 300 h fe(2) v ce =1v, i c = 50ma 60 dc current gain h fe(3) v ce =1v, i c = 100ma 30 collector-emitter saturation voltage v ce(sat) i c =50ma, i b = 5ma 0.3 v base-emitter saturation voltage v be(sat) i c = 50ma, i b = 5ma 0.95 v transition frequency f t v ce =20v, i c =10ma, f= 100mhz 300 mhz delay time t d 35 ns rise time t r v cc =3v, v be =-0.5v i c =10ma, i b1 =-i b2 =1.0ma 35 ns storage time t s 200 ns fall time t f v cc =3v, i c =10ma, i b1 =-i b2 =1ma 50 ns 1 base sot-23 2 emitter 3 collector MMBT2222 tiger electronic co.,ltd
typical characteristics
package outline plastic surface mounted package; 3 leads sot-23
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